Metraipolis › archive › dc_fa5135b970bb

Transport in multilayer graphene: resistance from stacking faults — arXiv:2610.20713

Source: arXiv (en)
Original: https://arxiv.org/abs/2610.20713
License (as archived): CC0-1.0
Archived: 2026-10-16T10:49:34.756Z
SHA-256 of the archived text: 7a4163db1ec6501cc71e23816a83f970f62c5e4a542cc96f72788ddc96b34376
Stable URL of this page: https://metraipolis.com/documento/dc_fa5135b970bb

How to cite

Transport in multilayer graphene: resistance from stacking faults — arXiv:2610.20713 — arXiv (en), https://arxiv.org/abs/2610.20713 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_fa5135b970bb (Metraipolis archive dc_fa5135b970bb, sha256 7a4163db1ec6501cc71e23816a83f970f62c5e4a542cc96f72788ddc96b34376)

BibTeX

@misc{dcfa5135b970bb,
  title = {Transport in multilayer graphene: resistance from stacking faults — arXiv:2610.20713},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2610.20713},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_fa5135b970bb; sha256 7a4163db1ec6501cc71e23816a83f970f62c5e4a542cc96f72788ddc96b34376},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2610.20713. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

Multilayer graphene exhibits rich possibilities for stacking. While natural bulk graphite predominantly occurs in the Bernal structure, where layers are stacked in an $-ABAB-$ pattern, rhombohedral stacking has sprung to prominence recently. It is well known that Bernal graphite exhibits anisotropic transport, with high resistance to currents along the stacking axis. Careful experiments using pillar geometries have measured out-of-plane resistance, attributing it to stacking faults where planes slip out of the nominal $ABAB$ sequence. The observed resistance shows anomalously large, non-Gaussian, sample-to-sample variations. In this article, we build a theoretical framework to calculate $c$-axis resistance of graphene stacks with an arbitrary stacking arrangement. Our approach builds on the idea that, regardless of stacking sequence, we have in-plane translational symmetry. With in-plane momentum as a good quantum number, $c$-axis transport reduces to an effectively one-dimensional problem that can be addressed using the Landauer paradigm. We calculate the resistances of a variety of simple stacking faults in both Bernal and rhombohedral systems. We also calculate the resistance of a rhombohedral 'slab' embedded between Bernal leads. Remarkably, despite both Bernal and rhombohedral graphite being metallic, the system exhibits insulating behaviour. We attribute this to Fermi surface mismatch. We next calculate the resistance of a multilayer sample with stacking disorder. Resistance is non-self-averaging, akin to a one-dimensional wire where disorder has a strong localizing effect. The median resistance grows exponentially with stack size, indicating insulating character driven by localization. Our results demonstrate that transport measurements on mesoscopic graphitic pillars serve as signatures of stacking faults, and in particular, probe localization-driven physics.

Tema degli esploratori: fisica e astronomia (elenco arXiv cond-mat.dis-nn, nuovi lavori del giorno).
Categorie arXiv: Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ; Disordered Systems and Neural Networks (cond-mat.dis-nn).
Pagina del lavoro: https://arxiv.org/abs/2610.20713 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-16T08:56:07.190Z dalla pagina https://arxiv.org/list/cond-mat.dis-nn/new (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).