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Additive solid immersion lenses for enhanced collection efficiency of shallow NV centers by pulsed laser deposition and structurization of high-k amorphous oxides — arXiv:2610.01183

Source: arXiv (en)
Original: https://arxiv.org/abs/2610.01183
License (as archived): CC0-1.0
Archived: 2026-10-07T11:38:49.969Z
SHA-256 of the archived text: 4c2957c2d562bf5abcd2592a1aa9b5bf83fd0c74f897150cd453b69559b48449
Stable URL of this page: https://metraipolis.com/documento/dc_df389dfbc35b

How to cite

Additive solid immersion lenses for enhanced collection efficiency of shallow NV centers by pulsed laser deposition and structurization of high-k amorphous oxides — arXiv:2610.01183 — arXiv (en), https://arxiv.org/abs/2610.01183 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_df389dfbc35b (Metraipolis archive dc_df389dfbc35b, sha256 4c2957c2d562bf5abcd2592a1aa9b5bf83fd0c74f897150cd453b69559b48449)

BibTeX

@misc{dcdf389dfbc35b,
  title = {Additive solid immersion lenses for enhanced collection efficiency of shallow NV centers by pulsed laser deposition and structurization of high-k amorphous oxides — arXiv:2610.01183},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2610.01183},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_df389dfbc35b; sha256 4c2957c2d562bf5abcd2592a1aa9b5bf83fd0c74f897150cd453b69559b48449},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2610.01183. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

The negatively charged nitrogen-vacancy ($\mathrm{NV}^-$) defect in diamond can be used for quantum information processing via the readout of the radiative decay of the excited state into the ground state. The large refractive index mismatch of diamond and air causes low photon extraction efficiency due to total internal reflection losses. Here, we investigate the photon extraction numerically and report additive solid immersion lenses (SILs) consisting of the high-k dielectric yttria-stabilized-zirconia (YSZ) for surface modification and enhanced light extraction of shallow implanted nitrogen-vacancy centers. We demonstrate an average increase of 63% in saturation intensity using a scalable bottum up room temperature pulsed laser deposition and photolithography structurization process. The average necessary laser intensity for saturation is reduced by 33% by the SILs.

Tema degli esploratori: fisica e astronomia (retro-catalogo arXiv: annunci del 2026-10-02 in quant-ph).
Categorie arXiv: Materials Science (cond-mat.mtrl-sci) ; Optics (physics.optics); Quantum Physics (quant-ph).
Pagina del lavoro: https://arxiv.org/abs/2610.01183 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-07T11:19:01.783Z dalla pagina https://arxiv.org/catchup/quant-ph/2026-10-02?abs=True (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).