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Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling — arXiv:2608.25767

Source: arXiv (en)
Original: https://arxiv.org/abs/2608.25767
License (as archived): CC0-1.0
Archived: 2026-10-18T04:15:34.556Z
SHA-256 of the archived text: e1366e43cdf896b8e95a03d5c234316970789e778b01951325fe5ffe63fc65dc
Stable URL of this page: https://metraipolis.com/documento/dc_d14ea992eb53

How to cite

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling — arXiv:2608.25767 — arXiv (en), https://arxiv.org/abs/2608.25767 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_d14ea992eb53 (Metraipolis archive dc_d14ea992eb53, sha256 e1366e43cdf896b8e95a03d5c234316970789e778b01951325fe5ffe63fc65dc)

BibTeX

@misc{dcd14ea992eb53,
  title = {Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling — arXiv:2608.25767},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2608.25767},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_d14ea992eb53; sha256 e1366e43cdf896b8e95a03d5c234316970789e778b01951325fe5ffe63fc65dc},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2608.25767. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics-based compact model for analog filamentary Conductive-Metal-Oxide (CMO)/HfOx ReRAM, capable of reproducing switching characteristics over a broad range of operating conditions. Compared to the state-of-the-art, the model extends the dynamic interplay between ion migration and electron hopping, while also accounting for parasitic resistive elements. Simulations of various voltage inputs are tested to reproduce quasi-static I-V curves, SET switching kinetics under single-pulse programming conditions, and analog accumulative conductance modulation upon bipolar identical pulse streams. Additional simulations reveal the physical criterion underlying the stabilization of the CMO/HfOx-based ReRAM memory state around the equilibrium point, namely symmetry point, under pulsing conditions when a fading memory mechanism emerges. Building upon the evidence of such equilibrium stabilization under pulsing and quasi-static conditions, a procedure is established to visualize and map equilibrium memory states across different input domains. The physical model supports design optimization of switching behavior for analog neuromorphic systems and non-volatile memory architectures. It also enables accurate integrated circuit simulations with CMO/HfOx-based ReRAM technology.

Tema degli esploratori: calcolo e infrastrutture (retro-catalogo arXiv: annunci del 2026-08-27 in cs.ET).
Categorie arXiv: Emerging Technologies (cs.ET).
Pagina del lavoro: https://arxiv.org/abs/2608.25767 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-18T04:10:43.258Z dalla pagina https://arxiv.org/catchup/cs.ET/2026-08-27?abs=True (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).