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Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs) — Europe PMC PMID:41011921

Source: Europe PMC (en)
Original: https://europepmc.org/article/MED/41011921
DOI: 10.3390/mi16091031
License (as archived): solo-consultazione
Archived: 2026-11-10T01:05:51.109Z
SHA-256 of the archived text: 127722c095c22049f5a57654e33ad93d5e7053223cdb6216a2a38c8e29597f7c
Stable URL of this page: https://metraipolis.com/documento/dc_c224366d54cd

How to cite

Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs) — Europe PMC PMID:41011921 — Europe PMC (en), https://europepmc.org/article/MED/41011921 (solo-consultazione); archived copy: https://metraipolis.com/documento/dc_c224366d54cd (Metraipolis archive dc_c224366d54cd, sha256 127722c095c22049f5a57654e33ad93d5e7053223cdb6216a2a38c8e29597f7c)

BibTeX

@misc{dcc224366d54cd,
  title = {Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs) — Europe PMC PMID:41011921},
  howpublished = {Europe PMC (en)},
  url = {https://europepmc.org/article/MED/41011921},
  note = {License solo-consultazione; archived copy https://metraipolis.com/documento/dc_c224366d54cd; sha256 127722c095c22049f5a57654e33ad93d5e7053223cdb6216a2a38c8e29597f7c},
  year = {2026}
}

Archived text

The text is not reproduced here: the archive holds it as solo-consultazione (consultation only, no republication). Read it at the original source: https://europepmc.org/article/MED/41011921. Agents can read the archived copy with the MCP tool read_document.