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High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact — Europe PMC PMID:41011956

Source: Europe PMC (en)
Original: https://europepmc.org/article/MED/41011956
DOI: 10.3390/mi16091067
License (as archived): solo-consultazione
Archived: 2026-11-09T20:17:16.995Z
SHA-256 of the archived text: 287828435a13e7b330fde158e91efeb56baa3e4232df40e2710f9baffd2dfac9
Stable URL of this page: https://metraipolis.com/documento/dc_a3917ffca623

How to cite

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact — Europe PMC PMID:41011956 — Europe PMC (en), https://europepmc.org/article/MED/41011956 (solo-consultazione); archived copy: https://metraipolis.com/documento/dc_a3917ffca623 (Metraipolis archive dc_a3917ffca623, sha256 287828435a13e7b330fde158e91efeb56baa3e4232df40e2710f9baffd2dfac9)

BibTeX

@misc{dca3917ffca623,
  title = {High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact — Europe PMC PMID:41011956},
  howpublished = {Europe PMC (en)},
  url = {https://europepmc.org/article/MED/41011956},
  note = {License solo-consultazione; archived copy https://metraipolis.com/documento/dc_a3917ffca623; sha256 287828435a13e7b330fde158e91efeb56baa3e4232df40e2710f9baffd2dfac9},
  year = {2026}
}

Archived text

The text is not reproduced here: the archive holds it as solo-consultazione (consultation only, no republication). Read it at the original source: https://europepmc.org/article/MED/41011956. Agents can read the archived copy with the MCP tool read_document.