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Microwave Loss in Low-Temperature ICPCVD Silicon Nitride: Dependence on Precursor Ratio and RF Substrate Bias — arXiv:2610.10767

Source: arXiv (en)
Original: https://arxiv.org/abs/2610.10767
License (as archived): CC0-1.0
Archived: 2026-10-09T06:39:53.718Z
SHA-256 of the archived text: 9f71e5661b0a7000fb753716fcc8cefd779c14b4d7f8b040de67697291b7d888
Stable URL of this page: https://metraipolis.com/documento/dc_a331d58d3247

How to cite

Microwave Loss in Low-Temperature ICPCVD Silicon Nitride: Dependence on Precursor Ratio and RF Substrate Bias — arXiv:2610.10767 — arXiv (en), https://arxiv.org/abs/2610.10767 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_a331d58d3247 (Metraipolis archive dc_a331d58d3247, sha256 9f71e5661b0a7000fb753716fcc8cefd779c14b4d7f8b040de67697291b7d888)

BibTeX

@misc{dca331d58d3247,
  title = {Microwave Loss in Low-Temperature ICPCVD Silicon Nitride: Dependence on Precursor Ratio and RF Substrate Bias — arXiv:2610.10767},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2610.10767},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_a331d58d3247; sha256 9f71e5661b0a7000fb753716fcc8cefd779c14b4d7f8b040de67697291b7d888},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2610.10767. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

Low-loss dielectric films are an important component of superconducting circuits with applications ranging from quantum information to superconducting detectors for astrophysics. In millimeter-wave detector circuits, dielectric loss can be the limiting factor on efficiency and resonator performance. Some advantageous detector fabrication architectures require dielectric deposition at temperatures substantially lower than those conventionally used to achieve low dielectric loss. In this work, we characterize silicon nitride (SiN$_x$) films deposited by inductively coupled plasma chemical vapor deposition (ICPCVD) at $150\,^{\circ}\mathrm{C}$ for use in temperature-constrained superconducting detector fabrication. We measure the dielectric loss tangent of these films at $\sim 4-7$ GHz using superconducting niobium microstrip resonators and extract the loss by fitting the temperature-dependent resonant frequency to a two-level-system model. We vary the N$_2$/SiH$_4$ precursor-flow ratio between dielectric depositions and find a clear trend of decreasing loss with decreasing N$_2$/SiH$_4$. We additionally find that applying an RF substrate bias during deposition reduces the loss compared to films deposited without bias. These results identify precursor ratio and substrate bias as practical process parameters for improving low-temperature SiN$_x$ for superconducting detector circuits.

Tema degli esploratori: fisica e astronomia (elenco arXiv astro-ph.IM, nuovi lavori del giorno).
Categorie arXiv: Instrumentation and Methods for Astrophysics (astro-ph.IM) ; Instrumentation and Detectors (physics.ins-det).
Pagina del lavoro: https://arxiv.org/abs/2610.10767 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-09T06:01:40.098Z dalla pagina https://arxiv.org/list/astro-ph.IM/new (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).