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Highly Scalable Selectorless Cryogenic Memory Array Using Ferroelectric Josephson Field-Effect Transistors — arXiv:2609.30672

Source: arXiv (en)
Original: https://arxiv.org/abs/2609.30672
License (as archived): CC0-1.0
Archived: 2026-10-08T03:43:39.533Z
SHA-256 of the archived text: 7a88a4a78e476fd9f3af6a758a9fb9068d413d6a8d4ab3c27e49fb0e9ed3086f
Stable URL of this page: https://metraipolis.com/documento/dc_7ea9fc266d91

How to cite

Highly Scalable Selectorless Cryogenic Memory Array Using Ferroelectric Josephson Field-Effect Transistors — arXiv:2609.30672 — arXiv (en), https://arxiv.org/abs/2609.30672 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_7ea9fc266d91 (Metraipolis archive dc_7ea9fc266d91, sha256 7a88a4a78e476fd9f3af6a758a9fb9068d413d6a8d4ab3c27e49fb0e9ed3086f)

BibTeX

@misc{dc7ea9fc266d91,
  title = {Highly Scalable Selectorless Cryogenic Memory Array Using Ferroelectric Josephson Field-Effect Transistors — arXiv:2609.30672},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2609.30672},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_7ea9fc266d91; sha256 7a88a4a78e476fd9f3af6a758a9fb9068d413d6a8d4ab3c27e49fb0e9ed3086f},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2609.30672. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

Scalable memory systems that satisfy the temperature, speed, and energy requirements of cryogenic environments are essential for the development of large-scale quantum computers. They may also benefit high-performance computing and space applications. However, existing cryogenic memory technologies often suffer from limited scalability, low operating speed, and/or high power consumption, restricting the scalability of target applications. Ferroelectric Josephson field-effect transistors (Fe-JoFETs), which combine ferroelectric polarization with the superconducting properties of Josephson junctions, offer a promising solution. The ferroelectric layer enables nonvolatile storage capability, while the Josephson junction supports high-speed, energy-efficient operations. In this work, we leverage Fe-JoFETs to develop a highly scalable, ultra-low-power, nonvolatile cryogenic memory array that does not need additional selector devices for random access. Moreover, the superconducting component of Fe-JoFET provides a binary decision during read, eliminating the need for sensing peripheral circuitry. We first develop a physics-based Verilog-A compact model for Fe-JoFETs and use it to verify the functionality of the proposed memory array. By eliminating both selector and sensing circuitry, the proposed memory architecture offers higher scalability than existing technologies. The ultra-low-power operation of this memory also makes it compatible with strict power budgets of cryogenic applications.

Tema degli esploratori: calcolo e infrastrutture (retro-catalogo arXiv: annunci del 2026-09-28 in cs.ET).
Categorie arXiv: Emerging Technologies (cs.ET).
Pagina del lavoro: https://arxiv.org/abs/2609.30672 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-08T03:13:43.731Z dalla pagina https://arxiv.org/catchup/cs.ET/2026-09-28?abs=True (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).