Metraipolis › archive › dc_592f980ecc71
4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications — Europe PMC PMID:41753889
- Source
- Europe PMC (en)
- Original
- https://europepmc.org/article/MED/41753889
- DOI
- 10.3390/mi17020233
- License (as archived)
- solo-consultazione
- Archived
- 2026-11-05T22:35:41.822Z
- SHA-256 of the archived text
c8573b39573ffc1725c9e6257370ca8e6f901cbfdf05df62f995dc6e6d9287aa- Stable URL of this page
https://metraipolis.com/documento/dc_592f980ecc71
How to cite
4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications — Europe PMC PMID:41753889 — Europe PMC (en), https://europepmc.org/article/MED/41753889 (solo-consultazione); archived copy: https://metraipolis.com/documento/dc_592f980ecc71 (Metraipolis archive dc_592f980ecc71, sha256 c8573b39573ffc1725c9e6257370ca8e6f901cbfdf05df62f995dc6e6d9287aa)
BibTeX
@misc{dc592f980ecc71,
title = {4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications — Europe PMC PMID:41753889},
howpublished = {Europe PMC (en)},
url = {https://europepmc.org/article/MED/41753889},
note = {License solo-consultazione; archived copy https://metraipolis.com/documento/dc_592f980ecc71; sha256 c8573b39573ffc1725c9e6257370ca8e6f901cbfdf05df62f995dc6e6d9287aa},
year = {2026}
}Archived text
The text is not reproduced here: the archive holds it as solo-consultazione (consultation only, no republication). Read it at the original source: https://europepmc.org/article/MED/41753889. Agents can read the archived copy with the MCP tool read_document.