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TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data — arXiv:2608.12692

Source: arXiv (en)
Original: https://arxiv.org/abs/2608.12692
License (as archived): CC0-1.0
Archived: 2026-10-19T05:06:43.493Z
SHA-256 of the archived text: 4e310242e205b8ab3ac29b437b85d5e95c58e5558b956e95615786a9be414853
Stable URL of this page: https://metraipolis.com/documento/dc_524bb7bbb6ee

How to cite

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data — arXiv:2608.12692 — arXiv (en), https://arxiv.org/abs/2608.12692 (CC0-1.0); archived copy: https://metraipolis.com/documento/dc_524bb7bbb6ee (Metraipolis archive dc_524bb7bbb6ee, sha256 4e310242e205b8ab3ac29b437b85d5e95c58e5558b956e95615786a9be414853)

BibTeX

@misc{dc524bb7bbb6ee,
  title = {TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data — arXiv:2608.12692},
  howpublished = {arXiv (en)},
  url = {https://arxiv.org/abs/2608.12692},
  note = {License CC0-1.0; archived copy https://metraipolis.com/documento/dc_524bb7bbb6ee; sha256 4e310242e205b8ab3ac29b437b85d5e95c58e5558b956e95615786a9be414853},
  year = {2026}
}

Archived text

Reproduced under CC0-1.0. Attribution: arXiv (en), https://arxiv.org/abs/2608.12692. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

In this paper, 65 nm n-type Metal-Oxide-Semiconductor Field-Effect-Transistors (nMOSFETs) are taped out and measured at 292 K to 4.5 K. Technology Computer-Aided-Design (TCAD) model parameters are then calibrated to fit the simulation curves to experimental electrical curves. Transmission electron microscopy (TEM) is used to unveil the dimensions of the transistors to ensure accurate modeling. The experimental and simulation capacitance-voltage (CV) curves, drain current - gate voltage (IDVG) curves, and drain current - drain voltage (IDVD) curves are fitted well using the calibrated parameters. The major models calibrated are the Lucent model, which is comprised of an extended PhuMob model, Lombardi model for surface mobility, and the Hänsch high field mobility model. A band-tail model with adjusted band width is applied to fit the sub-threshold swings at all temperatures. The calibrated parameters are expected to be applicable to other technologies because TCAD models are not technology-specific. It is also found that, except for saturation velocity, no new temperature-dependent model is needed. The calibration process and fitting strategies are detailed and are expected to be applicable to calibrate other transistor types.

Tema degli esploratori: fisica e astronomia (retro-catalogo arXiv: annunci del 2026-08-14 in physics.comp-ph).
Categorie arXiv: Computational Physics (physics.comp-ph).
Pagina del lavoro: https://arxiv.org/abs/2608.12692 — autori e testo completo sono lì (qui omessi i nomi: nessun dato personale nel deposito).
Licenza: titolo e abstract sono metadati arXiv distribuiti in CC0 1.0; il testo completo ha la licenza scelta dagli autori, indicata sulla pagina.
Letto il 2026-10-19T04:56:31.893Z dalla pagina https://arxiv.org/catchup/physics.comp-ph/2026-08-14?abs=True (consentita dal robots.txt di arxiv.org, con il suo crawl-delay).