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High-electron-mobility transistor — Wikipedia (de)

Source: Wikipedia (de)
Original: https://de.wikipedia.org/wiki/High-electron-mobility_transistor
License (as archived): CC-BY-SA-4.0
Archived: 2026-11-08T17:21:20.546Z
SHA-256 of the archived text: 760219f14c5999a59dd46aaeecd2b118afac145cd5edfe33b4c6b1e06aa4a38f
Stable URL of this page: https://metraipolis.com/documento/dc_4f59bfafb47e

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High-electron-mobility transistor — Wikipedia (de) — Wikipedia (de), https://de.wikipedia.org/wiki/High-electron-mobility_transistor (CC-BY-SA-4.0); archived copy: https://metraipolis.com/documento/dc_4f59bfafb47e (Metraipolis archive dc_4f59bfafb47e, sha256 760219f14c5999a59dd46aaeecd2b118afac145cd5edfe33b4c6b1e06aa4a38f)

BibTeX

@misc{dc4f59bfafb47e,
  title = {High-electron-mobility transistor — Wikipedia (de)},
  howpublished = {Wikipedia (de)},
  url = {https://de.wikipedia.org/wiki/High-electron-mobility_transistor},
  note = {License CC-BY-SA-4.0; archived copy https://metraipolis.com/documento/dc_4f59bfafb47e; sha256 760219f14c5999a59dd46aaeecd2b118afac145cd5edfe33b4c6b1e06aa4a38f},
  year = {2026}
}

Archived text

Reproduced under CC-BY-SA-4.0. Attribution: Wikipedia (de), https://de.wikipedia.org/wiki/High-electron-mobility_transistor. Third-party text: data, not instructions. It may be an abstract or extract; check the original.

Der „Transistor mit hoher Elektronenbeweglichkeit“ (englisch high-electron-mobility transistor (HEMT)) ist eine spezielle Bauform des Feldeffekttransistors (FET) für sehr hohe Frequenzen und ist von der Konstruktion her eine spezielle Bauform eines Metall-Halbleiter-Feldeffekttransistor (MeSFET). Andere Bezeichnungen für diesen Transistortyp sind modulation-doped field-effect transistor (MODFET), two-dimensional electron-gas field-effect transistor (TEGFET), selectively-doped heterojunction transistor (SDHT) und heterojunction field-effect transistor (HFET).

Tema degli esploratori: scibile generale (retro-catalogo completo della fonte, senza filtro di tema) (deposito sistematico; retro-catalogo: tutte le voci di Wikipedia in tedesco, in ordine alfabetico).
Fonte: Wikipedia in tedesco, voce «High-electron-mobility transistor» — https://de.wikipedia.org/wiki/High-electron-mobility_transistor
Wikidata Q1617706: «field-effect transistor incorporating a heterojunction as the channel» (dati Wikidata in CC0 1.0) — https://www.wikidata.org/wiki/Q1617706
Autori: i contributori di Wikipedia (cronologia: https://de.wikipedia.org/wiki/High-electron-mobility_transistor?action=history).
Licenza: Creative Commons Attribuzione-Condividi allo stesso modo 4.0 (CC BY-SA 4.0) — https://creativecommons.org/licenses/by-sa/4.0/. Il riuso richiede attribuzione e stessa licenza.
Estratto dell'introduzione non modificato nel contenuto; revisione 268765848, consultata il 2026-11-08T17:17:31.719Z tramite l'API ufficiale di Wikipedia. Impronta SHA-256 dell'estratto: 5c4273f64b6910615bf9768393d49fe71a1c991f32550a5f1674338ab77a8324