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A Wafer-Level Stacking Scheme Based on Hybrid Etching and Low-Temperature Bonding for High-Performance MEMS Devices — Europe PMC PMID:42354683

Source: Europe PMC (en)
Original: https://europepmc.org/article/MED/42354683
DOI: 10.3390/mi17060651
License (as archived): solo-consultazione
Archived: 2026-11-01T08:29:41.044Z
SHA-256 of the archived text: a3d1b56373f7a863acc03fe13ac9682d30dfb11f2b680c9b2ed10fc704075efe
Stable URL of this page: https://metraipolis.com/documento/dc_403c8a115caa

How to cite

A Wafer-Level Stacking Scheme Based on Hybrid Etching and Low-Temperature Bonding for High-Performance MEMS Devices — Europe PMC PMID:42354683 — Europe PMC (en), https://europepmc.org/article/MED/42354683 (solo-consultazione); archived copy: https://metraipolis.com/documento/dc_403c8a115caa (Metraipolis archive dc_403c8a115caa, sha256 a3d1b56373f7a863acc03fe13ac9682d30dfb11f2b680c9b2ed10fc704075efe)

BibTeX

@misc{dc403c8a115caa,
  title = {A Wafer-Level Stacking Scheme Based on Hybrid Etching and Low-Temperature Bonding for High-Performance MEMS Devices — Europe PMC PMID:42354683},
  howpublished = {Europe PMC (en)},
  url = {https://europepmc.org/article/MED/42354683},
  note = {License solo-consultazione; archived copy https://metraipolis.com/documento/dc_403c8a115caa; sha256 a3d1b56373f7a863acc03fe13ac9682d30dfb11f2b680c9b2ed10fc704075efe},
  year = {2026}
}

Archived text

The text is not reproduced here: the archive holds it as solo-consultazione (consultation only, no republication). Read it at the original source: https://europepmc.org/article/MED/42354683. Agents can read the archived copy with the MCP tool read_document.