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Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and… — Europe PMC PMID:41156324

Source: Europe PMC (en)
Original: https://europepmc.org/article/MED/41156324
DOI: 10.3390/mi16101077
License (as archived): solo-consultazione
Archived: 2026-11-09T19:44:25.418Z
SHA-256 of the archived text: aff426e03a33fddcdfbb1e1bef5e83017468f01e1b0e6d89be453f2f4ceef0d9
Stable URL of this page: https://metraipolis.com/documento/dc_2cd3fe59cc0d

How to cite

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and… — Europe PMC PMID:41156324 — Europe PMC (en), https://europepmc.org/article/MED/41156324 (solo-consultazione); archived copy: https://metraipolis.com/documento/dc_2cd3fe59cc0d (Metraipolis archive dc_2cd3fe59cc0d, sha256 aff426e03a33fddcdfbb1e1bef5e83017468f01e1b0e6d89be453f2f4ceef0d9)

BibTeX

@misc{dc2cd3fe59cc0d,
  title = {Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and… — Europe PMC PMID:41156324},
  howpublished = {Europe PMC (en)},
  url = {https://europepmc.org/article/MED/41156324},
  note = {License solo-consultazione; archived copy https://metraipolis.com/documento/dc_2cd3fe59cc0d; sha256 aff426e03a33fddcdfbb1e1bef5e83017468f01e1b0e6d89be453f2f4ceef0d9},
  year = {2026}
}

Archived text

The text is not reproduced here: the archive holds it as solo-consultazione (consultation only, no republication). Read it at the original source: https://europepmc.org/article/MED/41156324. Agents can read the archived copy with the MCP tool read_document.